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Hot-carrier reliability of MOS VLSI circuits /

Hot-carrier reliability of MOS VLSI circuits /

Sábháilte in:
Sonraí bibleagrafaíochta
Príomhchruthaitheoir: Leblebici, Yusuf
Rannpháirtithe: Kang, Sung-Mo, 1945-
Formáid: LEABHAR
Teanga:English
Foilsithe / Cruthaithe: Boston : Kluwer Academic, c1993.
Sraith:Kluwer international series in engineering and computer science. VLSI, computer architecture, and digital signal processing
Kluwer international series in engineering and computer science ; SECS 227.
Ábhair:
Integrated circuits > Very large scale integration > Defects > Mathematical models.
Metal oxide semiconductors > Reliability > Mathematical models.
Hot carriers > Reliability > Mathematical models.
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Míreanna comhchosúla

  • The bounding approach to VLSI circuit simulation /
    de réir: Zukowski, Charles A.
    Foilsithe / Cruthaithe: (1986)
  • Switch-level timing simulation of MOS VLSI circuits /
    Foilsithe / Cruthaithe: (1989)
  • The design and analysis of VLSI circuits /
    de réir: Glasser, Lance A.
    Foilsithe / Cruthaithe: (1985)
  • High speed VLSI interconnections : modeling, analysis, and simulation /
    de réir: Goel, Ashok K., 1953-
    Foilsithe / Cruthaithe: (1994)
  • Design of MOS VLSI circuits for telecommunications /
    Foilsithe / Cruthaithe: (1985)
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