Hot-carrier reliability of MOS VLSI circuits /

Hot-carrier reliability of MOS VLSI circuits /

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Bibliographic Details
Main Author:	Leblebici, Yusuf
Other Authors:	Kang, Sung-Mo, 1945-
Format:	Book
Language:	English
Published:	Boston : Kluwer Academic, c1993.
Series:	Kluwer international series in engineering and computer science. VLSI, computer architecture, and digital signal processing Kluwer international series in engineering and computer science ; SECS 227.
Subjects:	Integrated circuits > Very large scale integration > Defects > Mathematical models. Metal oxide semiconductors > Reliability > Mathematical models. Hot carriers > Reliability > Mathematical models.
Online Access:	Publisher description Table of contents only

Table of Contents:

Machine derived contents note: Preface. 1. Introduction. 2. Oxide Degradation Mechanisms in MOS Transistors. 3. Modeling of Degradation Mechanisms. 4. Modeling of Damaged MOSFETs. 5. Transistor-Level Simulation for Circuit Reliability. 6. Fast Timing Simulation for Circuit Reliability. 7. Macromodeling of Hot-Carrier Induced Degradation in MOS Circuits. 8. Circuit Design for Reliability. Index.