Modeling the process dependence of electrical charges associated with the silicon/silicon-dioxide interface /

Gorde:
Xehetasun bibliografikoak
Egile nagusia: Akinwande, Akintunde Ibitayo
Formatua: Thesis Liburua
Hizkuntza:English
Argitaratua: Ann Arbor, MI : University Microfilms International, c1987.
Gaiak:
LEADER 01162nam a2200277 a 4500
001 c000269997
003 CARM
005 20070830145020.0
008 890220s1987 miua bm 000 0 eng d
019 1 |a 6220514  |5 LACONCORD2021 
035 |a (OCoLC)226020463  |5 LACONCORD2021 
040 |a VVUT  |b eng  |c VVUT 
082 0 4 |a 621.38173  |2 19 
100 1 |a Akinwande, Akintunde Ibitayo. 
245 1 0 |a Modeling the process dependence of electrical charges associated with the silicon/silicon-dioxide interface /  |c by Akintunde Ibitayo Akinwande. 
260 |a Ann Arbor, MI :  |b University Microfilms International,  |c c1987. 
300 |a xxii, 157 p. :  |b ill. ;  |c 22 cm. 
502 |a Thesis (Ph.D.)--Stanford University, 1986. 
504 |a Bibliography: p. 135-157. 
650 0 |a Silicon  |x Electric properties. 
650 0 |a Silicon dioxide  |x Electric properties. 
650 0 |a Oxidation. 
650 0 |a Integrated circuits  |x Passivation. 
852 8 |b CARM  |h A1:AN09F0  |i C09696  |p 0392016  |f BK 
999 f f |i 8f62b885-db9b-5096-8107-ff0e88726809  |s 1375b212-3695-5748-9903-6e52a05c9c78 
952 f f |p Can circulate  |a CAVAL  |b CAVAL  |c CAVAL  |d CARM 1 Store  |e C09696  |f A1:AN09F0  |h Other scheme  |i book  |m 0392016