Process and device simulation for MOS-VLSI circuits /

Process and device simulation for MOS-VLSI circuits /

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Bibliographic Details
Corporate Author: NATO Advanced Study Institute on Process and Device Simulation for MOS-VLSI Circuits Urbino, Italy
Other Authors: Antognetti, Paolo
Format: Conference Proceeding Book
Language:English
Published: Boston : Hingham, MA : Nijhoff ; Distributors for the U.S. and Canada, Kluwer Boston, 1983.
Series:NATO ASI series. Applied sciences ; no. 62
Subjects:
Integrated circuits > Very large scale integration > Simulation methods > Congresses.
Metal oxide semiconductors > Simulation methods > Congresses.
Description
Item Description:"Proceedings of the NATO Advanced Study Institute on Process and Device Simulation for MOS-VLSI Circuits, SOGESTA, Urbino, Italy, July 12-23, 1982"--T.p. verso.
"Published in cooperation with NATO Scientific Affairs Division."
Physical Description:xii, 619 p. : ill. ; 25 cm.
Bibliography:Includes bibliographical references.
ISBN:902472824X (Netherlands)

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