NATO Advanced Study Institute on Process and Device Simulation for MOS-VLSI Circuits Urbino, Italy, & Antognetti, P. (1983). Process and device simulation for MOS-VLSI circuits. Nijhoff ; Distributors for the U.S. and Canada, Kluwer Boston.
Cita Chicago (17th ed.)NATO Advanced Study Institute on Process and Device Simulation for MOS-VLSI Circuits Urbino, Italy, i Paolo Antognetti. Process and Device Simulation for MOS-VLSI Circuits. Boston : Hingham, MA: Nijhoff ; Distributors for the U.S. and Canada, Kluwer Boston, 1983.
Cita MLA (8th ed.)NATO Advanced Study Institute on Process and Device Simulation for MOS-VLSI Circuits Urbino, Italy, i Paolo Antognetti. Process and Device Simulation for MOS-VLSI Circuits. Nijhoff ; Distributors for the U.S. and Canada, Kluwer Boston, 1983.